Three-dimensional semiconductor device

ABSTRACT

The semiconductor device include a lower insulating layer; a gate stack disposed over the lower insulating layer; a plurality of supports extending from the lower insulating layer toward the gate stack; a source layer disposed between the lower insulating layer and the gate stack; and a channel pattern including a connection part disposed between the source layer and the gate stack.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority under 35 U.S.C. § 119(a) toKorean patent application number 10-2017-0116715 filed on Sep. 12, 2017,the entire disclosure of which is incorporated herein by reference.

BACKGROUND

Field of Invention

Various embodiments of the present disclosure relate to a semiconductordevice and a method of manufacturing the same, and more particularly, toa three-dimensional semiconductor device and a method of manufacturingthe same.

Description of Related Art

A semiconductor device includes a plurality of memory cell transistorscapable of storing data. The memory cell transistors may be coupled inseries between select transistors, thus forming a memory string.Three-dimensional semiconductor devices embodied by stacking the gatesof the memory cell transistors and the select transistors vertically ona substrate are well known. However, increasing the density of thedevices, their operation speed and stability remain a challenge and arethe subject of significant research.

SUMMARY

An embodiment of the present disclosure may provide for a semiconductordevice including: a lower insulating layer; a gate stack disposed overthe lower insulating layer; a plurality of supports extending from thelower insulating layer toward the gate stack; a source layer disposedbetween the lower insulating layer and the gate stack; and a channelpattern including a connection part disposed between the source layerand the gate stack.

An embodiment of the present disclosure may provide for a method ofmanufacturing a semiconductor device, including: forming a source layerand a sacrificial layer over a lower insulating layer including a firstregion and a second region; forming first openings and a second openingby etching the source layer and the sacrificial layer, the firstopenings exposing the first region of the lower insulating layer, thesecond opening exposing the second region of the lower insulating layer;filling the first openings and the second opening with insulatingmaterial; forming a stack including holes and disposed over thesacrificial layer; opening a horizontal space between the source layerand the stack by removing the sacrificial layer through the holes; andforming a channel layer in the holes and the horizontal space.

These and other features and advantages of the present invention willbecome apparent to those skilled in the art to which the presentinvention pertains from the following detailed description in referenceto the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram illustrating a semiconductor device accordingto an embodiment of the present disclosure.

FIG. 2 is a plan view illustrating a semiconductor device according toan embodiment of the present disclosure.

FIGS. 3A and 3B are sectional views illustrating a semiconductor deviceaccording to an embodiment of the present disclosure.

FIG. 4 is a sectional view illustrating a semiconductor device accordingto an embodiment of the present disclosure.

FIG. 5 is an enlarged view of region C shown in FIGS. 3A, 3B or 4.

FIGS. 6 to 11E are sectional views illustrating a method ofmanufacturing a semiconductor device according to an embodiment of thepresent disclosure.

FIG. 12 is a perspective view illustrating a modification of a sourceseparation insulating layer.

FIG. 13 is a block diagram illustrating the configuration of a memorysystem according to an embodiment of the present disclosure.

FIG. 14 is a block diagram illustrating the configuration of a computingsystem in accordance with an embodiment of the present disclosure.

DETAILED DESCRIPTION

Example embodiments will now be described more fully hereinafter withreference to the accompanying drawings; however, we note that presentinvention may be embodied in different forms and should not be construedas limited to the embodiments set forth herein. Rather, theseembodiments are provided so that this disclosure will be thorough andcomplete, and will fully convey the scope of exemplary embodiments ofthe present invention to those with ordinary skill in the art of theinvention.

In the drawing figures, dimensions may be exaggerated for clarity ofillustration. It will be understood that when an element is referred toas being “between” two elements, it can be the only element between thetwo elements, or one or more intervening elements may also be present.

Hereinafter, embodiments will be described with reference to theaccompanying drawings. Embodiments are described herein with referenceto cross-sectional illustrations that are schematic illustrations ofembodiments (and intermediate structures). As such, variations from theshapes of the illustrations as a result, for example, of manufacturingtechniques and/or tolerances, are to be expected. Thus, embodimentsshould not be construed as limited to the particular shapes of regionsillustrated herein but may include deviations in shapes that result, forexample, from manufacturing. In the drawings, lengths and sizes oflayers and regions may be exaggerated for clarity. Like referencenumerals in the drawings denote like elements.

Terms such as ‘first’ and ‘second’ may be used to describe variouscomponents, but they should not limit the various components. Thoseterms are only used for the purpose of differentiating a component fromother components. For example, a first component may be referred to as asecond component, and a second component may be referred to as a firstcomponent and so forth without departing from the spirit and scope ofthe present disclosure. Furthermore, ‘and/or’ may include any one of ora combination of the components mentioned.

Furthermore, a singular form may include a plural from as long as it isnot specifically mentioned in a sentence. Also, “include/comprise” or“including/comprising” used in the specification represents that one ormore components, steps, operations, and elements may be exist inaddition to any stated components, steps, operations, and elements.

It is further noted that unless defined otherwise, all the terms used inthis specification including technical and scientific terms have thesame meanings as would be generally understood by those skilled in therelated art in view of the present specification. The terms defined ingenerally used dictionaries should be construed as having the samemeanings as would be construed in the context of the related art, andunless clearly defined otherwise in this specification, should not beconstrued as having idealistic or overly formal meanings.

It is also noted that in this specification, “connected/coupled” refersto one component not only directly coupling another component but alsoindirectly coupling another component through an intermediate component.On the other hand, “directly connected/directly coupled” refers to onecomponent directly coupling another component without an intermediatecomponent.

Various embodiments of the present disclosure may provide athree-dimensional semiconductor device having high structural stabilityand capable of simplifying a manufacturing method, and a method ofmanufacturing the semiconductor device.

Throughout the disclosure, like reference numerals refer to like partsthroughout the various figures and embodiments of the present invention.

In the following description, numerous specific details are set forth inorder to provide a thorough understanding of the present invention. Thepresent invention may be practiced without some or all of these specificdetails as it should be understood by those skilled in this art. Inother instances, well-known process structures and/or processes have notbeen described in detail in order not to unnecessarily obscure thepresent invention.

It is also noted, that in some instances, as would be apparent to thoseskilled in the relevant art, a feature or element described inconnection with one embodiment may be used singly or in combination withother features or elements of another embodiment, unless otherwisespecifically indicated.

FIG. 1 is a block diagram illustrating a semiconductor device accordingto an embodiment of the present disclosure.

Referring to FIG. 1, the semiconductor device according to an embodimentof the present disclosure may include a memory cell array 10 and aperipheral circuit 40.

The memory cell array 10 may include a plurality of memory blocks BLK0to BLKn. Each of the memory blocks BLK0 to BLKn may include a pluralityof memory strings. Each memory string may include channel pattern in theform of a pillar which is coupled between a source layer and a bit line.A plurality of memory cell transistors and select transistors may bestacked along the pillar of the channel pattern. Each of the memory celltransistors may store one or more bits.

The peripheral circuit 40 may include a row decoder 20 and a page buffer30.

The row decoder 20 may be electrically coupled with the memory cellarray 10 through word lines and select lines that extend from gates ofmemory cell transistors and select transistors, respectively. The rowdecoder 20 may be configured to select a memory block depending onaddress information.

The page buffer 30 may be electrically coupled with the memory cellarray 10 through bit lines. The page buffer 30 may be configured toselectively precharge the bit lines or sense the threshold voltage ofmemory cells using the potential of the bit lines.

The peripheral circuit 40 including the row decoder 20 and the pagebuffer 30 may be disposed in various layouts. For example, theperipheral circuit 40 may be disposed on one region of a substrate whichdoes not overlap the memory cell array 10. In an embodiment, theperipheral circuit 40 may be disposed below the memory cell array 10such that the peripheral circuit 40 overlaps the memory cell array 10.

FIG. 2 is a plan view illustrating a semiconductor device according toan embodiment of the present disclosure. In particular, FIG. 2 is a planview illustrating one end of a memory block. In FIG. 2, a layout ofsupports IP which are disposed below a gate stack GST is indicated by adotted line.

Referring to FIG. 2, the semiconductor device may include gate stacksGST, a channel pattern CH passing through each of the gate stacks GST, amultilayer memory layer ML enclosing an outer surface of the channelpattern CH, and a source contact line SCL disposed between the gatestacks GST. Although not shown in FIG. 2, a lower insulating layer and asource layer may be disposed below the gate stacks GST, and the sourcecontact line SCL may come into contact with the source layer. Thestructure for each of the source layer and the lower insulating layerwill be described with reference to FIG. 3A, 3B or 4.

As will be described later, the lower insulating layer includes a firstregion R1 and a second region R2, and the source layer extends onto thefirst region R1. The source layer does not extend onto the second regionR2. The first region R1 may be defined as an overlapping region of thesource layer, and the second region R2 may be defined as anon-overlapping region of the source layer.

Each gate stack GST may form a memory block. Each of the gate stacks GSTmay extend in a first direction I and a second direction II whichintersect with each other. The source contact line SCL may be disposedbetween two adjacent gate stacks GST in the second direction II. Aninsulating spacer IS formed along the sidewalls of the gate stacks GSTmay insulate the source contact line SCL from the gate stacks GST. Thesource contact line SCL is coupled with the source layer. The structureof coupling the source layer with the source contact line SCL will bedescribed with reference to FIG. 3A, 3B or 4.

Each stack GST may include gate electrodes SSL, WL1 to WLn, DSL1 andDSL2. The gate electrodes SSL, WL1 to WLn, DSL1 and DSL2 are stacked onthe first region R1 and are spaced apart from each other. The gateelectrodes may include at least one source select line SSL, a pluralityof word lines WL1 to WLn, and first and second drain select lines DSL1and DSL2. In FIG. 2, for simplicity, there is illustrated a single wordline WL1, however, a plurality of word lines WL1 to WLn are typicallystacked on the source select line SSL as shown in FIGS. 3A and 3B. Thesource select line SSL may be disposed to have a single layered or twoor more layered structure below the word lines WL1. The first drainselect line DSL1 and the second drain select line DSL2 are disposed onthe same plane, and are separated from each other in the seconddirection II by a drain separation insulating layer DS. The draininsulating layer DS may have the shape of an elongated bar extending inthe first direction I when viewed from the top. The drain separationinsulating layer DS may extend in a third direction III as to separatethe first and second select lines DSL1 and DSL2 but may not pass throughthe word lines WL1 to WLn and the source select line SSL. The thirddirection III may refer to a direction intersecting perpendicular to aplane that extends along the first direction I and the second directionII as shown in FIGS. 3A, 3B and 4. The first drain select line DSL1 maybe disposed to have a single layered or two or more layered structureover the word lines WL1 to WLn. The second drain select line DSL2 may bedisposed to have a single layered or two or more layered structure overthe word lines WL1 to WLn.

Each of the gate electrodes SSL, WL1 to WLn, DSL1 and DSL2 may include acell array region CAR and a contact region CTR. Each of the gateelectrodes SSL, WL1 to WLn, DSL1 and DSL2 may extend from the cell arrayregion CAR toward the contact region CTR. The cell array region CAR andthe contact region CTR may overlap the first region R1. The contactregion CTR may extend to the boundary between the first region R1 andthe second region R2, or extend onto one end of the second region R2adjacent to the first region R1.

The gate electrodes SSL, WL1 to WLn, DSL1 and DSL2 may be patterned toform a stepped structure in the contact region CTR. Consequently, an endof each of the gate electrodes SSL, WL1 to WLn, DSL1 and DSL2 may beexposed through the stepped structure in the contact region CTR.

The channel pattern CH may include a plurality of pillars PP which arespaced apart in the cell array region CAR. To increase the dispositiondensity of memory strings, the pillars PP may be arranged in a zigzagconfiguration as illustrated in FIG. 2, however, the invention is notlimited in this way. Each pillar PP may be passing through the gatestack GST. The pillars PP may be divided into a first group GR1 and asecond group GR2. The first group GR1 and the second group GR2 may becontrolled in common by each of the source select line SSL and the wordlines WL1 to WLn. The first group GR1 and the second group GR2 may becontrolled by different drain select lines. For example, the first groupGR1 may be controlled by the first drain select line DSL1, and thesecond group GR2 may be controlled by the second drain select line DSL2.Although not shown in FIG. 2, the channel pattern CH may include aconnection part. The connection part may be coupled to the pillars PPand extend between the gate stack GST and the source layer. Thestructure of the connection part of the channel pattern CH isillustrated in FIGS. 3A, 3B and 4.

A portion of a central region of the channel pattern CH defined by eachof the pillars PP may be filled with a capping pattern CAP. The pillarPP may be disposed without overlapping the supports IP, or,alternatively, may be disposed such that a part of the pillar PPoverlaps a corresponding support IR Each of the supports IP may be apattern which passes through the source layer and is coupled to thelower insulating layer. The supports IP may be made of insulatingmaterial. The supports IP may be disposed in holes which are arranged ina zigzag configuration, as shown in FIG. 2. Although not shown in thedrawings, each of the supports IP may have the form of a line disposedin a corresponding trench extending in one direction. The shape of eachof the supports IP and the layout of the supports IP may be changed invarious forms such that the shortest current path may be ensured in thechannel pattern CH.

Hereinafter, the structure of the connection part of the channel patternCH, the source layer, the lower insulating layer, the supports IP and soforth will be described in more detail with reference to sectionalviews.

FIGS. 3A and 3B are sectional views illustrating a semiconductor deviceaccording to an embodiment of the present disclosure. FIG. 4 is asectional view illustrating a semiconductor device according to anembodiment of the present disclosure. FIG. 3A is a sectional view takenalong line A-A′ shown in FIG. 2. FIGS. 3B and 4 are sectional viewstaken along line B-B′ shown in FIG. 2. FIGS. 3A, 3B and 4 schematicallyillustrate only a coupling relationship between the bit lines BL and thepillars PP of the channel pattern CH. The bit lines BL shown in FIGS.3A, 3B and 4 may be implemented with various structures which embody theillustrated coupling relationship.

Referring to FIGS. 3A to 4, a lower insulating layer LIL may be dividedinto the first region R1 and the second region R2. A source layer SL maybe disposed only on the first region R1 of the lower insulating layerLIL, and not on the second region R2. In detail, the source layer SL maynot overlap the second region R2, and an edge EG1 of the source layer SLmay be disposed on a boundary between the first region R1 and the secondregion R2. The source layer SL may be a silicon layer used as a sourceregion. The source layer SL may be or include a doped silicon layer. Inan embodiment, the source layer SL may have a stacked structureincluding an undoped silicon layer and the doped silicon layer. Thesource layer SL may include a first conductivity type dopant. The firstconductivity type dopant may be an n-type dopant.

A metal layer MT may be further formed between the source layer SL andthe lower insulating layer LIL. The metal layer MT may be formed of alow-resistance metal for reducing the resistance of the source layer SL.For example, the metal layer MT may include tungsten. Although not shownin the drawings, a doped semiconductor layer forming a well structuremay be further disposed between the source layer SL and the metal layerMT. The doped semiconductor layer forming the well structure may includea second conductivity type dopant different from the first conductivitytype dopant. The second conductivity type dopant may be a p-type dopant.

The gate stack GST may be disposed over the lower insulating layer LIL.As described in FIG. 2, the gate stack GST may include a cell arrayregion CAR and a contact region CTR. The source layer SL is disposedbetween the gate stack GST and the lower insulating layer LIL. Thesource layer SL comes into contact with the lower insulating layer LIL,and is spaced apart from the gate stack GST.

The gate stack GST may include the gate electrodes SSL, WL1 to WLn, DSL1and DSL2 and interlayer insulating layers ILD that are alternatelystacked in the third direction III.

Each interlayer insulating layer ILD may be formed of an insulatingmaterial such as an oxide layer. Each interlayer insulating layer ILDmay be disposed between two adjacent gate electrodes in the thirddirection III.

The gate electrodes SSL, WL1 to WLn, DSL1 and DSL2 may include a sourceselect line SSL that is used as a gate electrode of a source selecttransistor, word lines WL1 to WLn that are used as gate electrodes ofcorresponding memory cell transistors, and first drain select line DSL1and second drain select line DSL2 that are used as gate electrodes ofcorresponding drain select transistors.

Among the gate electrodes SSL, WL1 to WLn, DSL1 and DSL2, the sourceselect line SSL that is disposed in a lowermost layer adjacent to thesource layer SL may have a stacked structure including a firstconductive layer CP1 and a second conductive layer CP2. Each of thefirst conductive layer CP1 and the second conductive layer CP2 may beformed of one selected from among various conductive materials. Forexample, each of the first conductive layer CP1 and the secondconductive layer CP2 may be made of or include at least one of a dopedsilicon layer, a metal layer, a metal silicide layer and a barrier metallayer.

In an embodiment, the first conductive layer CP1 may be formed of aconductive material capable of functioning as an etching blocking layer,and the second conductive layer CP2 may be formed of conductive materialsuitable for forming a low-resistance line. In this case, the firstconductive layer CP1 and the second conductive layer CP2 may be formedof different conductive materials. In more detail, the conductivematerial to be used for forming the first conductive layer CP1 may beselected taking into account an etching rate such that the firstconductive layer CP1 can function as an etching stopper during a processof manufacturing the semiconductor device. For example, the firstconductive layer CP1 may be formed of a doped silicon layer. The firstconductive layer CP1 may include an n-type dopant. The first conductivelayer CP1 may have a relatively larger thickness than the secondconductive layer CP2 because it needs to have sufficient thickness tomake it possible to function as an etching stopper during themanufacturing process. The thickness of the first conductive layer CP1may be greater than that of each of the word lines WL1 to WLn in thethird direction III. The second conductive layer CP2 may be formed ofconductive material having resistance lower than that of the firstconductive layer CP1. For example, the second conductive layer CP2 maybe made of a tungsten layer. Although not shown, the source select lineSSL may further include a barrier metal layer that extends between thesecond conductive layer CP2 and the interlayer insulating layer ILD, andbetween the second conductive layer CP2 and the channel pattern CH. Oneset or two or more sets of source select groups each including theinterlayer insulating layer ILD and the second conductive layer CP2 maybe disposed under the word lines WL1 to WLn.

The word lines WL1 to WLn are stacked on the source select line SSL andspaced apart from each other. Each of the word lines WL1 to WLn may beformed of the same conductive material as that of the second conductivelayer CP2. Each of the word lines WL1 to WLn may further include abarrier metal layer.

The first drain select line DSL1 and the second drain select line DSL2may be disposed over the word lines WL1 to WLn. The first drain selectline DSL1 and the second drain select line DSL2 may be disposed on thesame plane. Each of the first drain select line DSL1 and the seconddrain select line DSL2 may extend in the first direction I. The firstdrain select line DSL1 and the second drain select line DSL2 may bespaced apart from each other in the second direction II. The first drainselect line DSL1 and the second drain select line DSL2 may be separatedfrom each other by the drain separation insulating layer DS extending inthe third direction III. The depth of the drain separation insulatinglayer DS may be controlled to prevent the drain separation insulatinglayer DS from passing through the source select line SSL and the wordlines WL1 to WLn.

Each of the first drain select line DSL1 and the second drain selectline DSL2 may be formed of the same conductive material as that of thesecond conductive layer CP2. Each of the first drain select line DSL1and the second drain select line DSL2 may further include a barriermetal layer. One set or two or more sets of drain select groups eachincluding the interlayer insulating layer ILD and the first and seconddrain select lines DSL1 and DSL2 that are disposed on the same plane onthe interlayer insulating layer ILD may be disposed over the word linesWL1 to WLn,

Each of the gate electrodes SSL, WL1 to WLn, DSL1 and DSL2 may extendfrom the cell array region CAR toward the contact region CTR. The gateelectrodes SSL, WL1 to WLn, DSL1 and DSL2 may be patterned to form astepwise structure SWS on the contact region CTR. Due to the stepwisestructure SWS, respective layers of the gate electrodes SSL, WL1 to WLn,DSL1 and DSL2 may be exposed. The respective layers of the gateelectrodes SSL, WL1 to WLn, DSL1 and DSL2 that are exposed due to thestepwise structure SWS are coupled with respective gate contact plugsGCT so as to receive signals from the peripheral circuit. Each gatecontact GCT may extend in the third direction III. The sidewall of thesource select line SSL disposed in a lowermost layer of the stepwisestructure SWS may be disposed on the same line as the edge EG1 of thesource layer SL, or may be misaligned with the edge EG1 of the sourcelayer SL.

To simplify the manufacturing process, the supports IP provided forsupporting a space between the gate stack GST and the source layer SLmay be formed by the same mask process as that of a source separationinsulating layer SIL by which the source layer SL and the metal layer MTare cut. The source separation insulating layer SIL may be directlycoupled to the second region R2 of the lower insulating layer LIL. Dueto the characteristics of the process, the source separation insulatinglayer SIL and the supports IP may be formed of the same material.

The supports IP formed through the same mask process as that of thesource separation insulating layer SIL may adhere to the first region R1of the lower insulating layer LIL, and extend toward the gate stack GST.In other words, the supports IP may pass through the source layer SL andthe metal layer MT that are disposed between the gate stack GST and thelower insulating layer LIL, and be directly coupled to the lowerinsulating layer LIL. The supports IP are formed of insulating material.For example, each of the supports IP may be formed of various oxidelayers such as an aluminum oxide layer or a silicon oxide layer. Becausethe supports IP are formed of the same kind of insulating material asthat of the lower insulating layer LIL, adhesion between the lowerinsulating layer LIL and the supports IP is greater than that betweenmaterial layers made of different kinds of materials. Therefore, thesupports IP that make contact with the lower insulating layer LIL maystably support the space between the gate stack GST and the source layerSL.

The source separation insulating layer SIL has a sidewall that iscoplanar with the edge EG1 of the source layer SL and an edge EG2 of themetal layer MT. The source separation insulating layer SIL formedthrough the same mask process as that of the supports IP may also extendalong the sidewall of a connection part LP of the channel pattern CHdisposed below the gate stack GST.

The channel pattern CH extends in the first direction I and the seconddirection II along the space between the source layer SL and the gatestack GST, and protrudes in the third direction III to pass through thegate stack GST. In more detail, the channel pattern CH may be dividedinto the connection part LP and pillar PP. The connection part LP andthe pillars PP may form an integrated channel pattern CH without havingan interface therebetween.

The pillars PP extend from the connection part LP to pass through thegate stack GST. The pillars PP are parts enclosed by the gate stack GST,and extend along the respective inner surfaces of the holes passingthrough the gate stack GST. The pillars PP are disposed in the cellarray region CAR.

The connection part LP is disposed in the space between the source layerSL and the gate stack GST, and encloses the supports IP. The connectionpart LP couples the pillars PP with each other. The connection part LPextends along the bottom of the gate stack GST, the sidewall of thesource separation insulating layer SIL, the sidewalls of the supportsIP, and an upper surface of the source layer SL. The connection part LPextends from the cell array region CAR toward the source separationinsulating layer SIL. The connection part LP may have a sidewall SWfacing the source separation insulating layer SIL.

The channel pattern CH may be enclosed by the multilayer memory layerML. The multilayer memory layer ML extends along the outer surface ofthe channel pattern CH. In other words, the multilayer memory layer MLextends along surfaces of the pillars PP and the connection part LP. Thechannel pattern CH may be formed in such a way as to enclose a gap-fillinsulating pattern FI.

The gap-fill insulating pattern FI is enclosed by the pillars PP, andextends to the space between the source layer SL and the gate stack GSTand is enclosed by the connection part LP. The gap-fill insulatingpattern FI may have a height less than that of the pillars PP. In thiscase, a capping pattern CAP may be disposed on top of each gap-fillinsulating pattern FI. Each capping pattern CAP may be enclosed by anupper end of the associated pillar PP. Each of the capping patterns CAPmay be formed of a semiconductor layer including a first conductivitytype dopant. For example, each of the capping patterns CAP may be formedof a silicon layer doped with an n-type dopant. Each of the cappingpatterns CAP may be used as a drain junction.

The capping pattern CAP may protrude further than the gate stack GST.The capping pattern CAP may be covered with an upper insulating layerUIL. The upper insulating layer UIL may also be disposed on the gatestack GST to cover the stepwise structure SWS, and extend to cover thesource separation insulating layer SIL. The upper insulating layer UILis penetrated by the gate contact plug GCT. The gate contact plug GCTmay further pass through the interlayer insulating layer ILD and comeinto contact with a gate electrode corresponding thereto.

Each of the supports IP has a side surface enclosed by the connectionpart LP. The multilayer memory layer ML extends between the connectionpart LP and the support IR

Each of the pillars PP of the channel pattern CH may be coupled to acorresponding one of the bit lines BL. The bit lines BL may be coupledto the pillars PP of the channel pattern CH via bit contact plugs to BCTpassing through the upper insulating layer UIL. Each bit contact plugBCT may be coupled to a corresponding capping pattern CAR Each of thebit lines BL may be coupled in common to one of the pillars PP passingthrough the first drain select line DSL1, and one of the pillars PPpassing through the second drain select line DSL2. In FIGS. 3A, 3B and4, for the sake of illustration, there is illustrated only thecorrespondence relationship between the bit lines BL and the bit contactplugs BCT. To couple the bit lines BL with the bit contact plugs BCT,pad patterns and contact structures may be further disposedtherebetween, and the layout of the bit lines BL, the pad patterns andthe contact structures may be designed in various ways.

The source contact line SCL may come into contact with the channelpattern CH and the source layer SL. The source contact line SCL extendsfrom inside of the source layer SL in the third direction III such thatthe source contact line SCL faces a sidewall of the gate stack GST. Thesource contact line SCL is insulated from the gate electrodes SSL, WL1to WLn, DSL1 and DSL2 of the gate stack GST by the insulating spacer ISwhich is disposed between the source contact line SCL and the gate stackGST.

The source contact line SCL comes into contact with the connection partLP of the channel pattern CH. The connection part LP of the channelpattern CH may extend to overlap a bottom surface of the insulatingspacer IS. In other words, the connection part LP protrudes sidewaysfurther than the sidewall of the gate stacks GST, to overlap the bottomsurface of the insulating spacer IS. The source contact line SCL maycome into contact with the connection part LP in such a way as to passthrough the connection part LP.

The source contact line SCL may protrude through the contact part LP ofthe channel pattern CH and partially into the source layer SL. Thesource contact line SCL may include a doped semiconductor layer SE, anda metal layer ME formed on the doped semiconductor layer SE.

The doped semiconductor layer SE may be a pattern coming into contactwith the source layer SL and the connection part LP of the channelpattern CH, and have a height less than that of the gate stack GST. Thedoped semiconductor layer SE may include a first conductivity typedopant to supply the first conductivity type dopant to the source layerSL and the channel pattern CH. The first conductivity type dopant may bean n-type dopant. In more detail, the doped semiconductor layer SE maybe formed of an n-type doped silicon layer.

The metal layer ME may be formed of low-resistance metal to reduce theresistance of the source contact line SCL. Although not shown indrawings, a metal silicide layer may be further disposed between themetal layer ME and the doped semiconductor layer SE. The metal layer MEmay include tungsten and the like. The source contact line SCL mayfurther include a barrier metal layer BM which extends along theinterface between the metal layer ME and the insulating spacer IS andthe interface between the doped semiconductor layer SE and the metallayer ME. The barrier metal layer BM may prevent metal diffusion, andmay be made of or include a titanium nitride layer, a tungsten nitridelayer, a tantalum nitride layer or the like.

The first conductivity type dopant may be distributed in a portion ofthe connection part LP of the channel pattern CH that is adjacent to thesource contact line SCL. The portion of the connection part LP of thechannel pattern CH including the first conductivity type dopant may beused as a source junction.

As described in FIG. 4, the lower insulating layer LIL may be disposedover a substrate SUB to cover driving transistors PTR which form aperipheral circuit PERI. The driving transistors PTR may be disposedunder the lower insulating layer LIL such that the driving transistorsPTR overlap at least one of the first region R1 and the second region R2of the lower insulating layer LIL. FIG. 5 is an enlarged view of regionC shown in FIGS. 3A, 3B or 4.

Referring to FIG. 5, the channel pattern CH may have an inner surfacefacing the capping pattern CAP and the gap-fill insulating pattern FI,and an outer surface enclosed by the multilayer memory layer ML.

The multilayer memory layer ML may include a tunnel insulating layer TIenclosing the channel pattern CH, a data storage layer DL enclosing thetunnel insulating layer TI, and a blocking insulating layer BI enclosingthe data storage layer DL. The data storage layer DL may store data tobe changed using the Fowler-Nordheim tunneling caused by a voltagedifference between the word lines WL1 to WLn shown in FIGS. 2, 3A, 3Band 4. For this operation, the data storage layer DL may be formed ofvarious materials, for example, a nitride layer capable of trappingcharges. In addition, the data storage layer DL may include silicon,phase-change material, nanodots, etc. The blocking insulating layer BImay include an oxide layer capable of blocking charges. The tunnelinsulating layer TI may be formed of a silicon oxide layer.

The channel pattern CH may be formed of a semiconductor layer, forexample, a silicon layer. Hereinafter, a method of manufacturing thesemiconductor device according to an embodiment of the presentdisclosure will be described with reference to FIGS. 6 to 11E.

FIG. 6 is a plan view illustrating a process result of a step of formingthe supports IP and the source separation insulating layer SIL.

Referring to FIG. 6, the supports IP and the source separationinsulating layer SIL may be formed using a mask process for patterning afirst stack STA1. The supports IP may be respectively disposed in firstopenings 121H passing through the first stack STA1. The supports IP orthe first openings 121H may be spaced apart in a zigzag arrangement. Thesource separation insulating layer SIL may be disposed in a secondopening 121T which defines an edge of the first stack STA1.

The first stack STA1, the supports IP and the source separationinsulating layer SIL may be formed on the lower insulating layer. Thelower insulating layer may be formed to cover the peripheral circuitPERI after the driving transistors PTR forming the peripheral circuitPERI shown in FIG. 4 have been provided on the substrate SUB.Hereinafter, a process of forming the first stack STA1, the supports IPand the source separation insulating layer SIL that are disposed on thelower insulating layer will be described in more detail with referenceto FIGS. 7A to 7C.

FIGS. 7A to 7C are sectional views illustrating the process of formingthe supports IP and the source separation insulating layer SIL that areshown in FIG. 6. FIGS. 7A to 7C show sectional views taken along lineD-D′ of FIG. 6 at various steps of the process.

Referring to FIG. 7A, a metal layer 111, a source layer 113 and asacrificial layer 115 are successively stacked on a lower insulatinglayer 101 which includes the first region R1 and the second region R2extending from the first region R1. The metal layer 111 may be formed oflow-resistance metal such as tungsten to form a low-resistance line. Thesource layer 113 may be formed of an n-type doped silicon layer. Thesacrificial layer 115 may be formed of a material layer having anetching rate different from that of the source layer 113. In moredetail, the sacrificial layer 115 may be formed of a material layerwhich minimizes loss of the source layer 113 and is selectively etchableduring an etching process of the sacrificial layer 115. For example, thesacrificial layer 115 may be formed of a titanium nitride layer TiN.

Subsequently, a mask pattern 117 may be formed on the sacrificial layer115. The mask pattern 117 may be a photoresist pattern formed through aphotolithography process. The mask pattern 117 may include openings thatdefine a region in which the second openings 121T is to be formed andregions in which the first openings 121H are to be formed.

The first stack STA1 may then be formed by etching the sacrificial layer115, the source layer 113 and the metal layer 111 through an etchingprocess using the mask pattern 117 as an etch barrier. The first stackSTA1 extends to overlap the first region R1 of the lower insulatinglayer 101. The first stack STA1 is cut by the second opening 121T thatis defined by removing the sacrificial layer 115, the source layer 113and the metal layer 111 in the second region R2 of the lower insulatinglayer 101.

The second opening 121T may have a trench shape extending to expose theentirety of the second region R2 of the lower insulating layer 101 froma boundary between the first region R1 and the second region R2 of thelower insulating layer 101. In other words, the second region R2 of thelower insulating layer 101 is exposed and is not covered with the firststack STA1.

The first stack STA1 is penetrated by the first openings 121H whichexpose the first region R1 of the lower insulating layer 101. Each ofthe first openings 121H may be formed in a hole shape, as shown in thedrawings. Although not shown, each of the first openings 121H may have aline shape extending in one direction when viewed from the top.

Referring to FIG. 7B, after the mask pattern 117 described in FIG. 7Ahas been removed, an insulating layer 125 is formed such that the firstopenings 121H and the second opening 121T are completely filledtherewith. The insulating layer 125 may be formed of the same kind ofmaterial as that of the lower insulating layer 101 to increase adhesionbetween the lower insulating layer 101 and the insulating layer 125. Forexample, the insulating layer 125 may be an oxide layer.

Referring to FIG. 7C, the sacrificial layer 115 is exposed byplanarizing the surface of the insulating layer 125 shown in FIG. 7B.Consequently, the insulating layer 125 remains as the supports IP insidethe respective first openings 121H, and also remains as the sourceseparation insulating layer SIL inside the second opening 121T.

As described in FIGS. 7A to 7C, the supports IP are formed through thesame mask process used for forming the source separation insulatinglayer SIL. Therefore, according to the described embodiment of thepresent disclosure, the supports IP may be formed without an additionalmask process for manufacturing the semiconductor device. In addition,because the supports IP come into contact with the lower insulatinglayer 101, the supports IP may more reliably adhere to the lowerinsulating layer 101, compared the case where the supports IP come intocontact with a conductive material or a semiconductor material.

FIG. 8 is a plan view illustrating a process result provided through thesteps of forming a stepwise structure SWS and a channel layer 153.

Referring to FIG. 8, the stepwise structure SWS may be formed bypatterning a second stack STA2 which includes a plurality of layers. Thestepwise structure SWS may be defined on an end of the second stackSTA2, and be disposed on a boundary between the first region R1 and thesecond region R2 or be disposed adjacent to the boundary between thefirst region R1 and the second region R2.

Some of the layers forming the second stack STA2 may be penetrated bythe drain separation insulating layer DS. The second stack STA2 ispenetrated by the channel layer 153 enclosed by a multilayer memorylayer 151. FIG. 8 illustrates a plurality of pillars PP of the channellayer 153. Each of the pillars PP may be formed to enclose acorresponding capping pattern 157. The pillars PP may be arranged in azigzag manner to improve the degree of integration of the semiconductordevice. The pillars PP may be arranged in a plurality of rows onopposite sides of the drain separation insulating layer DS.

FIGS. 9A to 9C and 10 are sectional views illustrating a process offorming the stepwise structure SWS and the channel layer 153 that areshown in FIG. 8. FIGS. 9A to 9C show, sectional views taken along lineB-B′ of FIG. 8 at various steps of the manufacturing process. FIG. 10 isa sectional view taken along line A-A′ shown in FIG. 8.

Referring to FIG. 9A, the second stack STA2 may be formed on thesacrificial layer 115. The second stack STA2 may include a firstconductive layer 127 stacked on the sacrificial layer 115, and aplurality of first and second material layers 131 and 133 that arealternately stacked on the first conductive layer 127. The firstmaterial layers 131 define regions in which gate electrodes are to bedisposed, and the second material layers 133 define regions in whichinterlayer insulating layers are to be disposed.

The first conductive layer 127 may be formed of material different fromthose of the first material layers 131 and the second material layers133. In more detail, the first conductive layer 127 may be formed ofmaterial which may be used not only as a gate electrode, but also as anetch stop layer during a following process of forming a slit. Forexample, the first conductive layer 127 may be formed of a doped siliconlayer. In more detail, the first conductive layer 127 may be formed of adoped silicon layer including an n-type dopant.

The second material layers 133 may be formed of material different fromthat of the first material layers 131. The first material layers 131 maybe made of sacrificial insulating material, and the second materiallayers 133 may be made of insulating material for interlayer insulatinglayers. In detail, each first material layer 131 may be formed of asilicon nitride layer, and each second material layer 133 may be formedof a silicon oxide layer.

Although not shown in the drawings, the first material layers 131 may beformed of second conductive layers for the gate electrodes SSL, WL1 toWLn, DSL1 and DSL2 shown in FIGS. 2 to 4, and the second material layers133 may be formed of insulating material for interlayer insulatinglayers.

After the second stack STA2 has been formed, the drain separationinsulating layer DS may pass through some of the first material layers131 and the second material layers 133. The drain separation insulatinglayer DS may be formed to separate first and second drain select linesfrom each other. The depth of the drain separation insulating layer DSmay be changed in various ways depending on designs. The drainseparation insulating layer DS may be omitted, if needed.

Subsequently, a mask pattern 141 may be formed on the second stack STA2.The mask pattern 141 may be patterned through a photolithographyprocess. The mask pattern 141 may include openings that expose regionsin which holes 145 are to be defined. Thereafter, the holes 145 exposingthe sacrificial layer 115 may be formed by etching the second stack STA2through an etching process using the mask pattern 141 as an etchbarrier. In the case where the sacrificial layer 115 is made of materialincluding a metal such as titanium nitride TiN, the bottom of each hole145 may be formed to have a relatively large width using a largedifference in etching rate between the second stack STA2 and thesacrificial layer 115.

Central axes of the holes 145 may be misaligned with those of thesupports IR For example, the holes 145 may be disposed not to overlapthe supports IP.

Referring to FIG. 9B, the sacrificial layer 115 shown in FIG. 9A isremoved through the holes 145. Consequently, a horizontal space 147opens in a region in which the sacrificial layer 115 has been removed.The horizontal space 147 is coupled to the holes 145, and is definedbetween the source layer 113 and the second stack STA2.

Upper ends of the supports IP may be exposed by the horizontal space147. The supports IP may support the second stack STA2 such that the gapof the horizontal space 147 is maintained. Because the supports IPadhere to the lower insulating layer 101 with high adhesion, thesupports may reliably maintain the horizontal space 147.

Referring to FIGS. 9C and 10, the multilayer memory layer 151 may beformed extending along the surfaces of the holes 145, the surface of thehorizontal space 147 and the exposed side surfaces of the supports IP.The step of forming the multilayer memory layer 151 may include firstforming a blocking insulating layer, then forming a data storage layeron the blocking insulating layer, and then forming a tunnel insulatinglayer on the data storage layer. The structure and material of each ofthe blocking insulating layer, the data storage layer and the tunnelinsulating layer are the same as those described with reference to FIG.5.

Thereafter, the channel layer 153 may be formed on the surface of themultilayer memory layer 151 and extend along the surfaces of the holes145, the surface of the horizontal space 147, and the side surfaces ofthe supports IR The channel layer 153 may be enclosed by the multilayermemory layer 151.

The channel layer 153 may be formed of a semiconductor layer. Forinstance, the channel layer 153 may be formed by depositing a siliconlayer. The channel layer 153 may be formed to be a single, continuous,integrated layer without any internal interface.

A central region of each hole 145 defined by the channel layer 153 and acentral region of the horizontal space 147 may be filled with a gap-fillinsulating layer 155. The gap-fill insulating layer 155 may be enclosedby the channel layer 153. The step of forming the gap-fill insulatinglayer 155 may include filling the holes 145 and the horizontal space 147with an insulating material. The insulating material layer may beselected from among various materials. For example, the insulatingmaterial may be formed by using a material having the fluidity. In thiscase, it is easy to fill the holes 145 and the horizontal space 147. Inan embodiment, a polysilazane (PSZ) may be used as the material layerhaving a sufficient fluidity for filling the holes 145 and thehorizontal space 147. After the PSZ has filled the holes and thehorizontal space it may be then hardened into a solid material byannealing.

The step of forming the gap-fill insulating layer 155 may furtherinclude the step of recessing a portion of the gap-fill insulating layer155 so that the height of the gap-fill insulating layer 155 is less thanthat of the channel layer 153. Consequently, the gap-fill insulatinglayer 155 is enclosed by the channel layer 153, and has a height lessthan that of the channel layer 153. A central region of the channellayer 153 that is exposed on the gap-fill insulating layer 155 may befilled with the capping pattern 157. The capping pattern 157 may beformed of a doped silicon layer including a first conductivity typedopant.

Subsequently, the stepwise structure SWS may be formed by patterning thesecond stack STA2. Thereafter, the mask pattern is removed. The sourceseparation insulating layer SIL may be exposed by the stepwise structureSWS.

Thereafter, an upper insulating layer 161 may be formed on the secondstack STA2 to cover the capping pattern 157 and the stepwise structureSWS. A surface of the upper insulating layer 161 may be planarized. Theupper insulating layer 161 may extend to cover an upper surface of thesource separation insulating layer SIL.

FIGS. 11A to 11E show sectional views illustrating various steps of theprocess of forming a source contact line.

Referring to FIG. 11A, a first through portion 165 is formed by etchingthe upper insulating layer 161 and the second stack STA2 described withreference to FIGS. 8, 9C and 10 through an etching process that stopswhen the first conductive layer 127 is exposed. The first conductivelayer 127 has been formed of material having an etch rate different fromthat of the first material layers 131 and the second material layers 133of the second stack STA2. As a result, the depth of the first throughportion 165 may be easily controlled such that the first through portion165 passes through the first material layers 131 and the second materiallayers 133 without passing through the first conductive layer 127. Toform the first through portion 165, a mask pattern (not shown) thatopens a region in which the first through portion 165 is to be formedmay be formed on the upper insulating layer 161. The mask pattern may beremoved after the first through portion 165 has been formed.

In the case where the first material layers 131 are formed ofsacrificial insulating material, the first material layers 131 may beremoved through the first through portion 165. Consequently, gateregions 167 may open between the second material layers 133, and betweenthe first conductive layer 127 and the second material layer 133adjacent thereto.

Referring to FIG. 11B, the process of forming the source contact linemay further include the step of respectively forming second conductivelayers 171 in the gate regions 167. The step of forming the secondconductive layers 171 may include the step of forming a third materiallayer through the first through portion 165 to fill the gate regions 167with the third material, and the step of removing the third materiallayer from the first through portion 165 such that the third materiallayer is separated into the second conductive layers 171. The thirdmaterial layer may be conductive material forming the second conductivelayers 171 and may be a metal layer having a resistance lower than thatof the first conductive layer 127. Before the third material layer isformed, an aluminum oxide layer (not shown) may be further formed alongsurfaces of the gate regions 167. The aluminum oxide layer may functionas a blocking insulating layer.

According to the foregoing process described with reference to FIGS. 11Aand 11B, the first material layers may be replaced with the secondconductive layers 171 through the first through portion 165. In anembodiment, in the case where the first material layers are made ofconductive material, the first material layers may remain separated intoa plurality of gate electrodes by the first through portion 165 withoutbeing replaced with the second conductive layers 171. Namely, the firstmaterial layers may be patterned as the gate electrodes.

Referring to FIG. 11C, the first through portion 165 may be extended toa depth to which the first conductive layer 127 is penetrated. The firstconductive layer 127 may be etched through an etch-back process.Thereby, the gate stacks GST described with reference to FIGS. 2 to 4may be patterned. The gate stacks GST may be separated by the firstthrough portion 165.

Subsequently, an insulating spacer 173 may be formed on the sidewall ofthe first through portion 165. The step of forming the insulating spacer173 may include first depositing an insulating layer along a surface ofthe first through portion 165, and then etching the insulating layerthrough an etch-back process. By etching the insulating layer, themultilayer memory layer 151 may be exposed through the bottom of thefirst through portion 165.

Thereafter, a second through portion 175 is formed by etching themultilayer memory layer 151, the channel layer 153, and the gap-fillinsulating layer 155 that are exposed through the bottom of the firstthrough portion 165. The second through portion 175 is coupled with thefirst through portion 165 and extends toward the source layer 113. Thesecond through portion 175 passes through the multilayer memory layer151, the channel layer 153 and the gap-fill insulating layer 155, andexposes the source layer 113.

The first through portion 165 and the second through portion 175 definea slit 177 in which the source contact line SCL described in FIG. 2 isto be disposed. The first through portion 165 and the second throughportion 175 also extend in the first direction I shown in FIG. 2.

Referring to 11D, a doped semiconductor layer 181 coupled to the sourcelayer 113 and the channel layer 153 may be formed in the slit 177. Thedoped semiconductor layer 181 may have a height less than that of theslit 177.

The doped semiconductor layer 181 may include a first conductivity typedopant. For example, the first conductivity type dopant may be an n-typedopant. In detail, the doped semiconductor layer 181 may be an n-typedoped silicon layer. The first conductivity type dopant of the dopedsemiconductor layer 181 may be diffused into the channel layer 153 andthe source layer 113 that are in contact to the doped semiconductorlayer 181.

Referring to FIG. 11E, a metal layer 185 may be formed. But before themetal layer 185 is formed, a barrier metal layer 183 may be formedconformally along the surface of the insulating spacer 173 and on thetop surface of the doped semiconductor layer 181.

Hence, remainder of the slit 177 which is not filled with the dopedsemiconductor layer 181 and the barrier metal layer 183 may becompletely filled with the metal layer 185. The metal layer 185 mayinclude a metal such as tungsten and/or the like. The barrier metallayer 183 may include a titanium nitride layer, a tungsten nitridelayer, a tantalum nitride layer and/or the like.

The source contact line SCL including the doped semiconductor layer 181,the barrier metal layer 183 and the metal layer 185 may be formedthrough the above-described process.

Subsequently, following processes such as a process of forming bitcontact plugs 187 passing through the upper insulating layer 161 may beperformed.

FIG. 12 is a perspective view illustrating a modification of the sourceseparation insulating layer SIL. For the sake of description, in FIG.12, there is illustrated only the structure disposed below the gatestack.

Referring to FIG. 12, as describe with reference to FIGS. 3A and 4, thesource separation insulating layer SIL may be directly coupled to thelower insulating layer LIL including the first region R1 and the secondregion R2. As described in FIG. 4, the lower insulating layer LIL isdisposed on the substrate SUB including the driving transistors PTR.

The driving transistors PTR may be insulated from each other by anisolation layer ISO disposed in the substrate SUB. Each of the drivingtransistors PTR may be coupled to a multilayer metal pattern MLM formedin the lower insulating layer LIL.

Metal layers MT and MTD and source layers SL and SLD may be disposed onthe lower insulating layer LIL. The source layers SL and SLD may includea cell source layer SL that remains over the first region R1 of thelower insulating layer LIL, and a dummy source layer SLD that remainsover the second region R2 of the lower insulating layer LIL. The cellsource layer SL and the dummy source layer SLD are formed of the samematerial as that of the source layer described with reference to FIGS.3A and 4.

The metal layers MT and MTD may be formed to reduce the resistance ofthe source layers SL and SLD as described with reference to FIGS. 3A and4. The metal layers MT and MTD may include a cell metal layer MT thatremains on the first region R1 of the lower insulating layer LIL, and adummy metal layer MTD that remains on the second region R2 of the lowerinsulating layer LIL.

The source separation insulating layer SIL may have the form of a lineextending along a boundary between the first region R1 and the secondregion R2. Such source separation insulating layer SIL separates thecell source layer SL from the dummy source layer SLD, and separates thecell metal layer MT from the dummy metal layer MTD.

The dummy source layer SLD and the dummy metal layer MTD may remain toprevent a dishing phenomenon during a process of forming the sourceseparation insulating layer SIL.

The dummy source layer SLD and the dummy metal layer MTD may bepenetrated by peripheral insulating pillars PIP extending parallel tothe supports IR The peripheral insulating pillars PIP come into directlycontact with an upper surface of the lower insulating layer LIL.

The peripheral insulating pillars PIP may be penetrated by peripheralcontact plugs PCT. Each of the peripheral contact plugs PCT may extendinto the lower insulating layer LIL and be coupled to the multilayermetal pattern MLM corresponding thereto.

In the embodiment of the present disclosure, the second region R2 of thelower insulating layer LIL may overlap the dummy source layer SLD andthe dummy metal layer MTD.

The semiconductor device including the structure shown in FIG. 12 may beformed by modifying the process described with reference to FIGS. 6 to11E.

In detail, to form the source separation insulating layer SIL and theperipheral insulating pillars PIP that are shown in FIG. 12, the shapeof the mask for forming the first opening and the second openingdescribed in FIG. 7A may be modified. The second opening according to anembodiment of the present disclosure may include a trench T disposed ona boundary between the first region R1 and the second region R2 of thelower insulating layer LIL, and peripheral holes PH spaced apart fromeach other on the second region R2 of the lower insulating layer LIL.The trench T passes through the source layer and separates the sourcelayer into the cell source layer SL and the dummy source layer SLD. Thetrench T passes through the metal layer and separates the metal layerinto the cell metal layer MT and the dummy metal layer MTD.Subsequently, the source separation insulating layer SIL and theperipheral insulating pillars PIP are formed simultaneously with thesupports IP by performing the process described with reference to FIGS.7B and 7C. The source separation insulating layer SIL is formed in thetrench T, and the peripheral insulating pillars PIP are formed in therespective peripheral holes PH.

Subsequently, the step of forming peripheral contact plugs PCT passingthrough the respective peripheral insulating pillars PIP may further beperformed.

Following processes are the same as those described with reference toFIGS. 8 to 11E.

FIG. 13 is a block diagram illustrating the configuration of a memorysystem 1100 according to an embodiment of the present disclosure.

Referring FIG. 13, the memory system 1100 in accordance with anembodiment includes a memory device 1120 and a memory controller 1110.

As described with reference to FIGS. 2, 3A, 3B, 4 and 12, the memorydevice 1120 may include the supports coupled to the lower insulatinglayer disposed below the source layer and supporting between the sourcelayer and the gate stack. Importantly, the supports may be formed byusing the process of forming the source separation insulating layer thatcuts the source layer, hence, without an additional manufacturingprocess. Moreover, the supports may be formed more stable than inexisting processes, thus providing a sturdier and less error pronethree-dimensional semiconductor memory device. In an embodiment, thememory device 1120 may be implemented as a multi-chip package includinga plurality of flash memory chips.

The memory controller 1110 may be configured to control the memorydevice 1120, and may include a static random access memory (SRAM) 1111,a CPU 1112, a host interface 1113, an error correction code (ECC) 1114,and a memory interface 1115. The SRAM 1111 is used as an operationmemory of the CPU 1112. The CPU 1112 may perform the overall controloperations for data exchange of the memory controller 1110. The hostinterface 1113 may be provided with a data interchange protocol of ahost coupled with the memory system 1100. Furthermore, the ECC 1114 maydetect and correct an error included in the data that is read from thememory device 1120, and the memory interface 1115 may interface thecontroller 1110 with the memory device 1120. In addition, the memorycontroller 1110 may further include a read only memory (ROM) or the likethat stores code data for interfacing with the host.

The above-described memory system 1100 may be implements as one ofvarious semiconductor devices including but not limiting a memory cardor a solid state disk (SSD) equipped with the memory device 1120 and thecontroller 1110. For example, when the memory system 1100 is an SSD, thememory controller 1110 may communicate with an external device (e.g., ahost) via one of various interface protocols, such as a universal serialbus (USB), a multimedia card (MMC), a peripheral componentinterconnection-express (PCI-E), a serial advanced technology attachment(SATA), a parallel advanced technology attachment (PATA), a smallcomputer small interface (SCSI), an enhanced small disk interface(ESDI), and an integrated drive electronics (IDE).

FIG. 14 is a block diagram illustrating the configuration of a computingsystem 1200 in accordance with an embodiment of the present disclosure.

Referring to FIG. 14, the computing system 1200 may include a CPU 1220,a random access memory (RAM) 1230, a user interface 1240, a modem 1250,and a memory system 1210 that are electrically coupled to a system bus1260. Furthermore, if the computing system 1200 is a mobile device, itmay further include a battery for supplying operating voltage to thecomputing system 1200. An application chip set, a camera image processor(CIS), a mobile DRAM and the like may be further included.

As described above with reference to FIG. 13, the memory system 1210 maybe configured with the memory device 1212 and the memory controller1211.

In an embodiment of the present disclosure, the structural stability ofthe semiconductor device may be increased by the supports describedabove. In an embodiment of the present disclosure, the supports and thesource separation insulating layer may be formed through a single maskprocess, whereby a process of manufacturing the semiconductor device maybe simplified. Moreover, the supports may be formed to be more stablethan in existing processes, thus providing a sturdier and less errorprone three-dimensional semiconductor memory device. In an embodiment,the memory device 1212 may be implemented as a multi-chip packageincluding a plurality of flash memory chips.

Examples of embodiments have been disclosed herein, and althoughspecific terms are employed, they are used and are to be interpreted ina generic and descriptive sense only and not for purpose of limitation.In some instances, as would be apparent to one of ordinary skill in theart as of the filing of the present application, features,characteristics, and/or elements described in connection with aparticular embodiment may be used singly or in combination withfeatures, characteristics, and/or elements described in connection withother embodiments unless otherwise specifically indicated. Accordingly,it will be understood by those of skill in the art that various changesin form and details may be made without departing from the spirit andscope of the present disclosure as set forth in the following claims.

What is claimed is:
 1. A semiconductor device comprising; a lowerinsulating layer; a gate stack disposed over the lower insulating layer;a plurality of supports extending from the lower insulating layer towardthe gate stack; a source layer disposed between the lower insulatinglayer and the gate stack; and a channel pattern including a connectionpart disposed between the source layer and the gate stack, wherein eachof the supports overlaps a sidewall of the source layer.
 2. Thesemiconductor device according to claim 1, wherein the supports supportthe gate stack and penetrate the source layer.
 3. The semiconductordevice according to claim 1, wherein the supports are formed of aninsulating material.
 4. The, semiconductor device according to claim 1,further comprising a metal layer disposed between the source layer andthe lower insulating layer, wherein the metal layer is penetrated by thesupports.
 5. The semiconductor device according to claim 1, furthercomprising a source contact line extending from the source layer along asidewall of the gate stack and contacting with the connection part ofthe channel pattern and the source layer.
 6. The semiconductor deviceaccording to claim 1, wherein the channel pattern includes pillarsextending from the connection part and passing through the gate stack,and wherein the connection part surrounds the supports.
 7. Thesemiconductor device according to claim 5, wherein the source contactline comprises a doped semiconductor layer contacting with the sourcelayer and the connection part, and a metal layer formed on the dopedsemiconductor layer.
 8. The semiconductor device according to claim 6,wherein the gate stack comprises gate electrodes and interlayerinsulating layers that are alternately stacked, and wherein the gateelectrodes and the interlayer insulating layers surround the pillars. 9.The semiconductor device according to claim 8, wherein the gateelectrodes comprise: a source select line formed of a stack structure offirst conductive material and second conductive material; and word linesand a drain select line disposed on the source select line and formed ofthe second conductive material.
 10. The semiconductor device accordingto claim 8, wherein each of the gate electrodes includes a cell arrayregion and a contact region, and wherein the gate electrodes arepatterned to form a stepped structure in the contact region whereby anend of each gate electrode is exposed through the stepped structure. 11.The semiconductor device according to claim 8, wherein the pillars arenot overlapping the supports.
 12. The semiconductor device according toclaim 10, wherein the plurality of pillars are spaced apart in the cellarray region a zigzag configuration.
 13. The semiconductor deviceaccording to claim 12, wherein the plurality of pillars are divided intoa first group and a second group, wherein each group is controlled by adifferent drain select line, and wherein the first and second groupsshare a common select line and a plurality of common word lines.
 14. Asemiconductor device comprising: a lower insulating layer; a gate stackdisposed over the lower insulating layer; a plurality of supportsextending from the lower insulating layer toward the gate stack; asource layer disposed between the lower insulating layer and the gatestack; a channel pattern including a connection part disposed betweenthe source layer and the gate stack; and a source separation insulatinglayer having a sidewall that is coplanar with an edge of the sourcelayer, and the source separation insulating layer extending onto asidewall of the connection part.
 15. The semiconductor device accordingto claim 14, further comprising: a dummy source layer facing the sourcelayer with the source separation insulating layer interposedtherebetween; peripheral insulating pillars passing through the dummysource layer and extending parallel to the supports; peripheral contactplugs passing through the respective peripheral insulating pillars andextending into the lower insulating layer; and driving transistorscoupled to the respective peripheral contact plugs.
 16. Thesemiconductor device according to claim 14, wherein the sourceseparation insulating layer and the supports are formed of the samematerial.
 17. A semiconductor device comprising: a lower insulatinglayer; a gate stack disposed over the lower insulating layer; aplurality of supports extending from the lower insulating layer towardthe gate stack; a source layer disposed between the lower insulatinglayer and the gate stack; and a channel pattern including a connectionpart disposed between the source layer and the gate stack, wherein thelower insulating layer includes a first region and a second region, andwherein the supports extend from the first region of the lowerinsulating layer.
 18. The semiconductor device, according to claim 17,further comprising a driving transistor disposed below the lowerinsulating layer to overlap at least one of the first and secondregions, and configured to form a peripheral circuit.
 19. Thesemiconductor device according to claim 17, wherein the plurality ofsupports are arranged in a zigzag configuration.
 20. The semiconductordevice according to claim 17, further comprising a source separationinsulating layer having a sidewall that is coplanar with an edge of thesource layer, the source separation insulating layer extending onto asidewall of the connection part, and wherein the source separationinsulating layer and the supports are made of a same material.